Invention Grant
- Patent Title: Bipolar junction transistor
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Application No.: US15614636Application Date: 2017-06-06
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Publication No.: US10431674B2Publication Date: 2019-10-01
- Inventor: Sheng Cho , Chen-Wei Pan
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201710311951 20170505
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/08 ; H01L29/735 ; H01L29/06 ; H01L29/732
Abstract:
A bipolar junction transistor preferably includes: an emitter region; a base region; and a collector region, in which an edge of the emitter region is aligned with an edge of the base region. Preferably, an edge of the base region is aligned with an edge of the collector region, the edge of the emitter region is aligned with the edges of the base region and the collector region, and the widths of the emitter region, the base region, and the collector region are equivalent. According to a top view of the bipolar junction transistor, each of the base region and the collector region includes a rectangle.
Public/Granted literature
- US20180323292A1 BIPOLAR JUNCTION TRANSISTOR Public/Granted day:2018-11-08
Information query
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