Invention Grant
- Patent Title: Semiconductor device and method for forming the same
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Application No.: US15857347Application Date: 2017-12-28
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Publication No.: US10431676B2Publication Date: 2019-10-01
- Inventor: Hsin-Chih Lin , Yu-Chieh Chou
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/778 ; H01L29/78 ; H01L29/205 ; H01L21/02 ; H01L29/66 ; H01L21/308 ; H01L21/306

Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate and a first III-V group compound semiconductor layer disposed on the substrate. The first III-V group compound semiconductor layer includes a fin structure having a top surface, a first sidewall, and a second sidewall opposite to the first sidewall. The semiconductor device also includes a second III-V group compound semiconductor layer disposed on the first III-V group compound semiconductor layer. The first III-V group compound semiconductor layer and the second III-V group compound semiconductor layer are made of different materials. The semiconductor device also includes a gate electrode disposed on the second III-V group compound semiconductor layer.
Public/Granted literature
- US20190207020A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2019-07-04
Information query
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