Invention Grant
- Patent Title: Semiconductor devices and a method for forming a semiconductor device
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Application No.: US15486460Application Date: 2017-04-13
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Publication No.: US10431681B2Publication Date: 2019-10-01
- Inventor: Jens Peter Konrath , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016106967 20160415
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/308 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes a gate trench of at least one transistor structure extending into a semiconductor substrate. The gate trench includes at least one sidewall having a bevel portion located adjacent to a bottom of the gate trench. The at least one sidewall of the gate trench is formed by the semiconductor substrate. An angle between the bevel portion and a lateral surface of the semiconductor substrate is between 110′ and 160°. A lateral dimension of the bevel portion is larger than 50 nm. Methods for forming the semiconductor device are also provided.
Public/Granted literature
- US20170301792A1 Semiconductor Devices and a Method for Forming a Semiconductor Device Public/Granted day:2017-10-19
Information query
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