Invention Grant
- Patent Title: Method for making a semiconductor device with a compressive stressed channel
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Application No.: US15837281Application Date: 2017-12-11
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Publication No.: US10431683B2Publication Date: 2019-10-01
- Inventor: Shay Reboh , Emmanuel Augendre , Remi Coquand , Nicolas Loubet
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: FR Paris US NY Yorktown Heights
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: FR Paris US NY Yorktown Heights
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1662529 20161215
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/10 ; H01L29/423 ; H01L29/786 ; H01L29/161

Abstract:
A method for making a semiconductor device, including: a) etching a stack of a layer of a second semiconductor, which is crystalline, arranged between a substrate and a layer of a first semiconductor, which is crystalline, the second semiconductor being different from the first semiconductor and subjected to a compressive stress, forming a nanowire stack, b) making a dummy gate and outer spacers, covering a part of the nanowire stack which is formed by portions of the nanowires, c) etching the nanowire stack such that only said part of the stack is preserved, d) removing the portion of the second semiconductor nanowire, e) depositing, in a space formed by this removal, a sacrificial material portion, f) making source and drain regions and inner spacers, g) removing the dummy gate and the sacrificial material portion, h) making a gate.
Public/Granted literature
- US20180175194A1 METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH A COMPRESSIVE STRESSED CHANNEL Public/Granted day:2018-06-21
Information query
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