Invention Grant
- Patent Title: Thin film transistor and display device
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Application No.: US15743122Application Date: 2017-11-23
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Publication No.: US10431689B2Publication Date: 2019-10-01
- Inventor: Xiao Wang
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Agency: Hauptman Ham, LLP
- Priority: CN201711088246.9 20171107
- International Application: PCT/CN2017/112603 WO 20171123
- International Announcement: WO2019/090842 WO 20190516
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L23/373 ; H01L27/12

Abstract:
The disclosure discloses a thin film transistor and a display panel. The thin film transistor includes a gate, a source, a drain, an active layer, and a heat transmitting layer; wherein the heat transmitting layer is arranged on a side of the active layer. In the disclosure, the heat of the active layer may be promptly conducted to the surrounding environment, so as to prevent the self-heating effect of the thin film transistor from affecting the normal working state.
Public/Granted literature
- US20190140100A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE Public/Granted day:2019-05-09
Information query
IPC分类: