Invention Grant
- Patent Title: Transistors comprising at lease one of GaP, GaN, and GaAs
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Application No.: US15848982Application Date: 2017-12-20
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Publication No.: US10431695B2Publication Date: 2019-10-01
- Inventor: Durai Vishak Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St John P.S.
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L27/115 ; H01L29/423 ; H01L29/786

Abstract:
A transistor comprises a pair of source/drain regions having a channel region there-between. A transistor gate construction is operatively proximate the channel region. The channel region comprises a direction of current flow there-through between the pair of source/drain regions. The channel region comprises at least one of GaP, GaN, and GaAs extending all along the current-flow direction. Each of the source/drain regions comprises at least one of GaP, GaN, and GaAs extending completely through the respective source/drain region orthogonal to the current-flow direction. The at least one of the GaP, the GaN, and the GaAs of the respective source/drain region is directly against the at least one of the GaP, the GaN, and the GaAs of the channel region. Each of the source/drain regions comprises at least one of elemental silicon and metal material extending completely through the respective source/drain region orthogonal to the current-flow direction. Other embodiments are disclosed.
Public/Granted literature
- US20190189807A1 Transistors Comprising At Least One Of GaP, GaN, and GaAs Public/Granted day:2019-06-20
Information query
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