Invention Grant
- Patent Title: Structure and formation method of semiconductor device structure with nanowire
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Application No.: US15873929Application Date: 2018-01-18
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Publication No.: US10431696B2Publication Date: 2019-10-01
- Inventor: Wilman Tsai , Cheng-Hsien Wu , I-Sheng Chen , Stefan Rusu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L27/092 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L21/02 ; H01L21/8238 ; H01L29/49
Abstract:
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate including a first fin portion and a first nanowire over the first fin portion. The first nanowire has a polygonal cross-section. The semiconductor device structure also includes a first gate structure surrounding the first nanowire, and two first source/drain portions adjacent to the first nanowire.
Public/Granted literature
- US20190140105A1 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRE Public/Granted day:2019-05-09
Information query
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