Invention Grant
- Patent Title: Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride
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Application No.: US16238213Application Date: 2019-01-02
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Publication No.: US10431698B2Publication Date: 2019-10-01
- Inventor: Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014118874 20141217
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/16 ; H01L21/04 ; H01L29/66 ; H01L29/868 ; H01L29/06 ; H01L29/20
Abstract:
According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.
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