A semiconductor heterostructure including a polarization doped region is described. The region can correspond to an active region of a device, such as an optoelectronic device. The region includes an n-type semiconductor side and a p-type semiconductor side and can include one or more quantum wells located there between. The n-type and/or p-type semiconductor side can be formed of a group III nitride including aluminum and indium, where a first molar fraction of aluminum nitride and a first molar fraction of indium nitride increase (for the n-type side) or decrease (for the p-type side) along a growth direction to create the n- and/or p-polarizations.