Invention Grant
- Patent Title: Shielded magnetoresistive random access memory devices and methods for fabricating the same
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Application No.: US15609621Application Date: 2017-05-31
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Publication No.: US10431732B2Publication Date: 2019-10-01
- Inventor: Bhushan Bharat , Shan Gao , Danny Pak-Chum Shum , Wanbing Yi , Juan Boon Tan , Wei Yi Lim , Teck Guan Lim , Michael Han Kim Kwong , Eva Wai Leong Ching
- Applicant: Globalfoundries Singapore Pte. Ltd. , Institute of Microelectronics
- Applicant Address: SG Singapore SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.,AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.,AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- Current Assignee Address: SG Singapore SG Singapore
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L23/00 ; H01L43/02 ; H01L23/13 ; H01L23/552 ; H01L23/498

Abstract:
Shielded semiconductor devices and methods for fabricating shielded semiconductor devices are provided. An exemplary magnetically shielded semiconductor device includes a substrate having a top surface and a bottom surface. An electromagnetic-field-susceptible semiconductor component is located on and/or in the substrate. The magnetically shielded semiconductor device includes a top magnetic shield located over the top surface of the substrate. Further, the magnetically shielded semiconductor device includes a bottom magnetic shield located under the bottom surface of the substrate. Also, the magnetically shielded semiconductor device includes a sidewall magnetic shield located between the top magnetic shield and the bottom magnetic shield.
Public/Granted literature
- US20180351078A1 SHIELDED SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING SHIELDED SEMICONDUCTOR DEVICES Public/Granted day:2018-12-06
Information query
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