A perpendicular magnetic tunnel junction device (pMTJ) is provided that has a structure of a first heavy metal layer, a first thin dusting layer on the first heavy metal layer, a first CoFeB layer on the thin dusting layer, a MgO barrier layer on the first CoFeB layer, a second CoFeB layer on the MgO barrier layer, a second thin dusting layer on the CoFeB layer; and a second heavy metal layer on the thin dusting layer. The insertion of the thin dusting layer improves thermal stability of the pMTJ structure.