Invention Grant
- Patent Title: Cross-domain ESD protection circuit
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Application No.: US15673914Application Date: 2017-08-10
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Publication No.: US10431975B2Publication Date: 2019-10-01
- Inventor: Tay-Her Tsaur , Cheng-Cheng Yen
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW105132276A 20161005
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02 ; H02H3/20

Abstract:
An ESD protection circuit includes: a first current path switch arranged in a parallel connection with a first circuit and turned off when a first node voltage is at a logic high level; a first node for providing the first node voltage; a resister element coupled between a first power terminal and the first node; a MOS capacitor coupled between the first node and a first fixed-voltage terminal; a second current path switch arranged in a parallel connection with a second circuit and controlled by a second node voltage; a switch control circuit for providing the second node voltage; and a node voltage control circuit for controlling the first node voltage according to the second node voltage to ensure the first current path switch is turned off when the first power terminal supplies power to the first circuit while the second power terminal supplies power to the second circuit.
Public/Granted literature
- US20180097355A1 CROSS-DOMAIN ESD PROTECTION CIRCUIT Public/Granted day:2018-04-05
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