Invention Grant
- Patent Title: Sensitivity compensation for capacitive MEMS device
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Application No.: US15910390Application Date: 2018-03-02
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Publication No.: US10433070B2Publication Date: 2019-10-01
- Inventor: Alfons Dehe , Abidin Güçlü Onaran
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H04R19/04
- IPC: H04R19/04 ; B81B3/00 ; B81C1/00 ; H04R19/00 ; H04R7/04
Abstract:
A MEMS device includes a membrane and a counter electrode structure spaced apart from the membrane. The counter electrode structure includes a non-planar conductive layer. The MEMS device includes an air gap between the membrane and the counter electrode structure. The air gap has a non-uniform thickness.
Public/Granted literature
- US20190273993A1 Sensitivity Compensation for Capacitive MEMS Device Public/Granted day:2019-09-05
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