Invention Grant
- Patent Title: Semiconductor pressure sensor including improved structure and integrated sensor chip
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Application No.: US15510506Application Date: 2014-09-28
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Publication No.: US10436663B2Publication Date: 2019-10-08
- Inventor: Sheng Liu , Xiaoping Wang , Dengfeng Wu , Fanliang Li , Bin Chen
- Applicant: WUHAN FINEMEMS INC.
- Applicant Address: CN Hubei
- Assignee: WUHAN FINEMEMS INC.
- Current Assignee: WUHAN FINEMEMS INC.
- Current Assignee Address: CN Hubei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN201410461573 20140911
- International Application: PCT/CN2014/000878 WO 20140928
- International Announcement: WO2016/037302 WO 20160317
- Main IPC: G01L19/00
- IPC: G01L19/00 ; G01L19/14 ; G01L9/06 ; G01L9/00

Abstract:
A pressure sensor has a housing, an air lead-in hole, a pressure lead-in hole, an inner cavity, a sensor chip, a lead frame and a cover plate. One end of the air lead-in hole is in communication with the inner cavity of the housing, and the other end of the air lead-in hole is in communication with the air; the pressure lead-in hole is perpendicularly disposed at the center of the upper surface of the housing, two steps are disposed on the upper surface of the inner cavity, and a horizontal surface-mounted device surface is disposed on each of the steps. The center of the sensor chip is aligned with the centers of the pressure lead-in hole, and the lower end of the pressure lead-in holes are in communication with the cavity of the sensor chip.
Public/Granted literature
- US20170254713A1 PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-09-07
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