Invention Grant
- Patent Title: 2H/1T phase contact engineering for high performance transition metal dichalcogenide chemical vapor sensors
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Application No.: US15479014Application Date: 2017-04-04
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Publication No.: US10436744B2Publication Date: 2019-10-08
- Inventor: Adam L. Friedman , F. Keith Perkins , James C. Culbertson , Aubrey T. Hanbicki , Paul M. Campbell
- Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
- Applicant Address: US DC Washington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Stephen T. Hunnius
- Main IPC: G01N27/414
- IPC: G01N27/414 ; H01L29/24 ; G03F7/40 ; H01L29/66 ; G03F1/20 ; G01N33/00

Abstract:
A method of making a low dimensional material chemical vapor sensor comprising providing a monolayer of a transition metal dichalcogenide, applying the monolayer to a substrate, applying a PMMA film, defining trenches, and placing the device in a n-butyl lithium (nbl) bath. A low dimensional material chemical vapor sensor comprising a monolayer of a transition metal dichalcogenide, the monolayer applied to a substrate, a region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium, the region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium have transitioned from a semiconducting to metallic phase, metal contacts on the region or regions of the transition metal dichalcogenide that have been treated with the n-butyl lithium.
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