Invention Grant
- Patent Title: Resist material, resist composition and method for forming resist pattern
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Application No.: US15309780Application Date: 2015-05-08
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Publication No.: US10437148B2Publication Date: 2019-10-08
- Inventor: Takumi Toida , Takashi Sato , Masatoshi Echigo
- Applicant: Mitsubishi Gas Chemical Company, Inc.
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Gas Chemical Company, Inc.
- Current Assignee: Mitsubishi Gas Chemical Company, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Fitch, Even, Tabin & Flannery LLP
- Priority: JP2014-096999 20140508
- International Application: PCT/JP2015/063272 WO 20150508
- International Announcement: WO2015/170734 WO 20151112
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30 ; C08G8/12 ; C08G8/14 ; C08G8/16 ; C08G8/18 ; C08G8/24 ; C08G10/02 ; C08G12/02 ; C08G18/02 ; G03F7/039 ; G03F7/038 ; H01L21/027 ; C08G8/04 ; G03F7/16 ; G03F7/20 ; G03F7/32 ; G03F7/38
Abstract:
The resist material according to the present invention contains a compound represented by the following formula (1): wherein each R0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.
Public/Granted literature
- US20170145142A1 RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN Public/Granted day:2017-05-25
Information query
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