Invention Grant
- Patent Title: Memory device, memory system, and method of operating the memory system
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Application No.: US14696609Application Date: 2015-04-27
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Publication No.: US10438684B2Publication Date: 2019-10-08
- Inventor: Seong-Hyeog Choi , Jun-Jin Kong , Hong-Rak Son , Pil-Sang Yoon , Chang-Kyu Seol , Ki-Jun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2014-0101794 20140807
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52 ; G11C29/04
Abstract:
A method of operating a memory system, having a non-volatile memory device, includes processing a response to a first request toward the memory device by using an original key, in response to the first request, generating and storing first parity data corresponding to the original key, and deleting the original key.
Public/Granted literature
- US20160041783A1 MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING THE MEMORY SYSTEM Public/Granted day:2016-02-11
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