Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US15886840Application Date: 2018-02-02
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Publication No.: US10438794B2Publication Date: 2019-10-08
- Inventor: Yen-Lun Huang , Jia-Zhe Liu , Man-Hsuan Lin
- Applicant: GlobalWafers Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd.
- Current Assignee: GlobalWafers Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW106121769A 20170629
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/20 ; H01L29/205 ; H01L33/00 ; H01L33/12 ; H01L33/04

Abstract:
A semiconductor device including a substrate, a semiconductor layer, and a buffer structure is provided. The semiconductor layer is located on the substrate. The buffer structure is located between the substrate and the semiconductor layer. The buffer structure includes a plurality of first layers and a plurality of second layers. The first layers and the second layers are alternately stacked with a same pitch or different pitches.
Public/Granted literature
- US20190006178A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2019-01-03
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