A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.