Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
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Application No.: US15720768Application Date: 2017-09-29
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Publication No.: US10438819B2Publication Date: 2019-10-08
- Inventor: Naoki Matsumoto
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-114934 20120518
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/67 ; H01L21/263 ; C23C16/511 ; H01J37/32 ; H01L21/324 ; H05H1/46 ; C23C16/40
Abstract:
A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator.
Public/Granted literature
- US20180025923A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2018-01-25
Information query
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