Invention Grant
- Patent Title: Inorganic lift-off profile process for semiconductor wafer processing
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Application No.: US16176272Application Date: 2018-10-31
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Publication No.: US10438848B2Publication Date: 2019-10-08
- Inventor: Leon Benton Pearce , Glenn Anthony Silveira
- Applicant: Semi Automation & Technologies, Inc.
- Applicant Address: US CA Campbell
- Assignee: Semi Automation & Technologies, Inc.
- Current Assignee: Semi Automation & Technologies, Inc.
- Current Assignee Address: US CA Campbell
- Agency: Gard & Kaslow LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; G03F7/16 ; G03F7/20 ; H01L21/027 ; G03F7/26
Abstract:
An Inorganic Lift-Off-Profile-Process (referred to herein as “ILOPP”) is described wherein a portion of a surface inorganic oxide is etched from a substrate oxide surface and under a photoresist edge that supports a sacrificial metal layer. This oxide etched profile under the sacrificial photoresist/metal edge improves Lift-Off of the sacrificial metal layer and delivers smoother, improved metal edge definition in addition to an improved planer surface (flatness) as compared to known LOP technologies.
Public/Granted literature
- US20190131168A1 Inorganic Lift-Off Profile Process For Semiconductor Wafer Processing Public/Granted day:2019-05-02
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