- Patent Title: Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage
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Application No.: US15821684Application Date: 2017-11-22
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Publication No.: US10438853B2Publication Date: 2019-10-08
- Inventor: Shahab Siddiqui , Beth Baumert , Abu Naser M. Zainuddin , Luigi Pantisano
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; C23C16/455 ; H01L21/02 ; H01L21/28 ; H01L27/088 ; H01L29/423 ; H01L29/49 ; H01L29/51 ; H01L29/66 ; H01L21/311 ; C23C16/50
Abstract:
At least one method, apparatus and system are provided for forming a hybrid oxide layer for providing for a first region of a finFET device to operate at a first voltage and a second region of the finFET to operate at a second voltage. A first set of fins are formed on an I/O device portion, and a second set of fins are formed on a core device portion of a substrate. A first and a second oxide layers are deposited on the first and second set of fins, wherein they merge to form a hybrid oxide layer. The thickness of the second oxide layer is based on a first operating voltage for the I/O device portion. The hybrid layer is removed from the core device portion such that the I/O device portion operates at the first voltage and the core device portion operates at a second voltage.
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