Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15778635Application Date: 2016-02-04
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Publication No.: US10438865B2Publication Date: 2019-10-08
- Inventor: Koichi Taguchi , Yuki Hata
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/053382 WO 20160204
- International Announcement: WO2017/134799 WO 20170810
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/24 ; H01L23/373 ; H01L23/053 ; H01L23/50 ; H01L23/36 ; H01L23/498

Abstract:
It is an object of the present invention to provide a semiconductor device that has sufficient insulation properties between a screw and a heat dissipation plate, and is smaller and less costly. A semiconductor device of the present invention includes the following: a housing containing a semiconductor element; a heat dissipation plate disposed on a bottom surface of the housing, and provided to partly extend beyond the housing to reach the outside; an electrode electrically connected to the semiconductor element, and provided to partly protrude from the housing to the outside in parallel with the heat dissipation plate; and a screw with which an exposed portion of the electrode, protruding from the housing is joined to a busbar. The heat dissipation plate has a thickness lack portion in a location of the heat dissipation plate, the location at least facing the screw, the location being on a screw side.
Public/Granted literature
- US20180358279A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-13
Information query
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