Invention Grant
- Patent Title: Semiconductor device including an air gap between wirings and manufacturing method thereof
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Application No.: US15701497Application Date: 2017-09-12
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Publication No.: US10438892B2Publication Date: 2019-10-08
- Inventor: Toshiyuki Morita
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-015889 20170131
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/522 ; H01L21/768 ; H01L21/764
Abstract:
A semiconductor device according to present embodiment has first wirings provided in a first area and made of a first metal. A first gap is provided between the first wirings adjacent to each other. Second wirings or contact plugs are provided in a second area in which the first wirings are not provided. The second wirings or contact plugs are made of a second metal. A first insulation film is provided between the second wirings or contact plugs adjacent to each other. The first insulation film has second gaps. A second insulation film is provided on the first wirings, the first gap, and the second gaps.
Public/Granted literature
- US20180218982A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-08-02
Information query
IPC分类:
