- Patent Title: Metal interconnect structure and method for fabricating the same
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Application No.: US15784180Application Date: 2017-10-15
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Publication No.: US10438893B2Publication Date: 2019-10-08
- Inventor: Shih-Hsien Chen , Meng-Jun Wang , Ting-Chun Wang , Chih-Sheng Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201710867909 20170922
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L21/311 ; H01L21/02 ; H01L23/528 ; H01L23/522
Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first inter-metal dielectric (IMD) layer thereon; forming a first metal interconnection and a second metal interconnection in the first IMD layer; removing part of the first IMD layer to form a recess between the first metal interconnection and the second metal interconnection; performing a curing process; and forming a second IMD layer on the first metal interconnection and the second metal interconnection.
Public/Granted literature
- US20190096819A1 METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-03-28
Information query
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