Invention Grant
- Patent Title: Crack stop barrier and method of manufacturing thereof
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Application No.: US15700638Application Date: 2017-09-11
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Publication No.: US10438903B2Publication Date: 2019-10-08
- Inventor: Sylvia Baumann Winter
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/544 ; H01L23/58 ; H01L21/78
Abstract:
A semiconductor device includes a chip, a first kerf adjacent the chip and having a first main direction, a second kerf adjacent the chip and having a second main direction. A kerf junction is formed by the first kerf and the second kerf. A crack stop barrier is located along a first portion of a perimeter of the kerf junction.
Public/Granted literature
- US20180012848A1 Crack Stop Barrier and Method of Manufacturing Thereof Public/Granted day:2018-01-11
Information query
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