Invention Grant
- Patent Title: Monolithic decoupling capacitor between solder bumps
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Application No.: US15795576Application Date: 2017-10-27
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Publication No.: US10438913B2Publication Date: 2019-10-08
- Inventor: Effendi Leobandung
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L29/40 ; H01L23/00 ; H01L23/522

Abstract:
An integrated circuit includes pads formed on a back end of the line surface, and decoupling capacitor stacks monolithically formed about the pads. Solder balls are formed on the pads and connect to metal layers within the decoupling capacitor stacks to reduce noise and voltage spikes between the solder balls.
Public/Granted literature
- US20180286825A1 MONOLITHIC DECOUPLING CAPACITOR BETWEEN SOLDER BUMPS Public/Granted day:2018-10-04
Information query
IPC分类: