Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15508035Application Date: 2014-09-17
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Publication No.: US10438929B2Publication Date: 2019-10-08
- Inventor: Toshiyuki Kouchi , Masaru Koyanagi
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/JP2014/074460 WO 20140917
- International Announcement: WO2016/042603 WO 20160324
- Main IPC: H01L25/065
- IPC: H01L25/065 ; G11C5/00 ; G11C16/04 ; G11C16/06 ; H01L23/00 ; G11C5/02 ; G11C5/06

Abstract:
According to one embodiment, M (M represents an integer of 2 or larger) semiconductor chips and through electrodes for N (N represents an integer of 2 or larger) channels are provided. The M semiconductor chips are stacked in sequence. The through electrodes are embedded in the semiconductor chips to connect electrically the semiconductor chips in the direction of stacking. The connection destination of the through electrodes are exchanged between one or more upper and lower layers of the semiconductor chips.
Public/Granted literature
- US20170309598A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-10-26
Information query
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