Invention Grant
- Patent Title: Semiconductor integrated circuit device
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Application No.: US16218149Application Date: 2018-12-12
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Publication No.: US10438939B2Publication Date: 2019-10-08
- Inventor: Tooru Matsui
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: Socionext Inc.
- Current Assignee: Socionext Inc.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-217335 20141024
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/02 ; H01L21/3205 ; H01L21/768 ; H01L23/528 ; H01L23/00 ; H02H9/04

Abstract:
Disclosed herein is a configuration for ensuring ESD protection capability for a core power supply of a semiconductor integrated circuit device, without causing an increase in the circuit area. A first pad row in a core region includes a first pad for core power supply. The first pad is connected to a core power supply interconnect, and supplied with a power supply potential or a ground potential. A second pad row provided outwardly from the first pad row includes a second pad for core power supply. The second pad is supplied with the same power supply or ground potential as the first pad for core power supply, and connected to an I/O cell for core power supply.
Public/Granted literature
- US20190115337A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2019-04-18
Information query
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