Invention Grant
- Patent Title: ESD protection for depletion-mode devices
-
Application No.: US15393728Application Date: 2016-12-29
-
Publication No.: US10438940B2Publication Date: 2019-10-08
- Inventor: Darrell Glenn Hill
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01L27/02

Abstract:
A device includes a transistor configured for depletion-mode operation, the transistor having a gate terminal and a drain terminal, and an electrostatic discharge (ESD) protection circuit coupling the gate terminal and the drain terminal. The ESD protection circuit includes a discharge path circuit and a trigger circuit coupled to, and configured to control, the discharge path circuit. The discharge path circuit and the trigger circuit are disposed between the gate terminal and the drain terminal.
Public/Granted literature
- US20180190639A1 ESD PROTECTION FOR DEPLETION-MODE DEVICES Public/Granted day:2018-07-05
Information query