Invention Grant
- Patent Title: Semiconductor apparatus
-
Application No.: US15995113Application Date: 2018-05-31
-
Publication No.: US10438941B2Publication Date: 2019-10-08
- Inventor: Yi-Yun Tsai , Chih-Hung Chen , Chin-Fu Chen
- Applicant: UBIQ Semiconductor Corp.
- Applicant Address: TW Hsinchu County
- Assignee: UBIQ Semiconductor Corp.
- Current Assignee: UBIQ Semiconductor Corp.
- Current Assignee Address: TW Hsinchu County
- Agency: JCIPRNET
- Priority: TW107103915A 20180205
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/866

Abstract:
A semiconductor apparatus including a substrate, an electrostatic discharge protection device, a resistor device, and a first metal layer is provided. The substrate defines a pad area and includes a first area and a second area. The first area has a recess, the second area is disposed in the recess, and the pad area is partially overlapped with the first area and the second area. The electrostatic discharge protection device is disposed in the first area of the substrate. The resistor device is disposed in the second area of the substrate. The first metal layer is disposed above and electrically connected to the electrostatic discharge protection device and the resistor device.
Public/Granted literature
- US20190244952A1 SEMICONDUCTOR APPARATUS Public/Granted day:2019-08-08
Information query
IPC分类: