Invention Grant
- Patent Title: Semiconductor device having ESD element
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Application No.: US15328724Application Date: 2015-07-08
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Publication No.: US10438944B2Publication Date: 2019-10-08
- Inventor: Tomomitsu Risaki
- Applicant: SII Semiconductor Corporation
- Applicant Address: JP
- Assignee: ABLIC Inc.
- Current Assignee: ABLIC Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2014-156501 20140731; JP2015-114024 20150604
- International Application: PCT/JP2015/069643 WO 20150708
- International Announcement: WO2016/017383 WO 20160204
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/088 ; H01L23/528 ; H01L23/482

Abstract:
When an ESD element is operated, for the purpose of suppressing heat generation and causing uniform current to flow through all channels of all transistors included in the ESD element, various substrate potentials existing in the transistors and the channels of a multi finger type ESD element are electrically connected via a low resistance substrate, and further, are set to a potential that is different from a Vss potential. In this manner, the current is uniformized and heat generation is suppressed through low voltage operation to improve an ESD tolerance.
Public/Granted literature
- US20170221878A1 SEMICONDUCTOR DEVICE HAVING ESD ELEMENT Public/Granted day:2017-08-03
Information query
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