Invention Grant
- Patent Title: Method of manufacturing a semiconductor die
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Application No.: US15708661Application Date: 2017-09-19
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Publication No.: US10438945B2Publication Date: 2019-10-08
- Inventor: Martin Vielemeyer , Walter Rieger , Martin Pölzl , Gerhard Nöbauer
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/8252 ; H01L27/06 ; H01L27/088
Abstract:
A method of manufacturing a semiconductor die includes: forming a power HEMT (high-electron-mobility transistor) in a III-nitride semiconductor substrate, the power HEMT having a gate, a source and a drain; monolithically integrating a first gate driver HEMT with the power HEMT in the III-nitride semiconductor substrate, the first gate driver HEMT having a gate, a source and a drain and logically forming part of a driver; and electrically connecting the first gate driver HEMT to the gate of the power HEMT so that the first gate driver HEMT is operable to turn the power HEMT off or on responsive to an externally-generated control signal received from the driver or other device.
Public/Granted literature
- US20180047719A1 Method of Manufacturing a Semiconductor Die Public/Granted day:2018-02-15
Information query
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