Invention Grant
- Patent Title: Method of writing into and refreshing a thyristor volatile random access memory
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Application No.: US15658346Application Date: 2017-07-24
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Publication No.: US10438952B2Publication Date: 2019-10-08
- Inventor: Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng
- Applicant: Kilopass Technology, Inc.
- Applicant Address: US CA Gilroy
- Assignee: TC Lab, Inc.
- Current Assignee: TC Lab, Inc.
- Current Assignee Address: US CA Gilroy
- Agency: Aka Chan LLP
- Main IPC: G11C11/39
- IPC: G11C11/39 ; H01L27/102 ; H01L29/749 ; H01L29/66 ; H01L29/10 ; H01L29/16 ; H01L29/06 ; H01L21/762 ; H01L21/324 ; H01L21/28 ; H01L21/321 ; H01L29/45 ; H01L49/02 ; H01L29/423 ; H01L29/08
Abstract:
A method of writing data into a volatile thyristor memory cell array and maintaining the data with refresh is disclosed.
Public/Granted literature
- US20170323891A1 Thyristor Volatile Random Access Memory and Methods of Manufacture Public/Granted day:2017-11-09
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