Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15917183Application Date: 2018-03-09
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Publication No.: US10438967B2Publication Date: 2019-10-08
- Inventor: Jin Ha Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0104897 20170818
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L29/10 ; H01L27/1157 ; H01L27/11524 ; H01L29/165
Abstract:
Provided herein is a semiconductor device and a method of manufacturing the same. The semiconductor device has improved erase characteristics by using a select gate enclosing a portion a first semiconductor region overlapping a second semiconductor region. The first semiconductor region and the second semiconductor region are formed of different semiconductor materials.
Public/Granted literature
- US20190057975A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-02-21
Information query
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