Invention Grant
- Patent Title: Devices including magnetic tunnel junctions integrated with selectors
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Application No.: US15865249Application Date: 2018-01-08
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Publication No.: US10438995B2Publication Date: 2019-10-08
- Inventor: Kuk-Hwan Kim , Dafna Beery , Andy Walker , Amity Levi
- Applicant: Spin Transfer Technologies, Inc.
- Applicant Address: US CA Fremont
- Assignee: SPIN MEMORY, INC.
- Current Assignee: SPIN MEMORY, INC.
- Current Assignee Address: US CA Fremont
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L43/02 ; H01L43/10 ; G11C11/16 ; H01F10/32

Abstract:
A Magnetic Tunnel Junction (MTJ) device can include an array of cells. The array of cells can include a plurality of source lines disposed in columns, set of selectors coupled to respective source lines, MJT structures coupled to respective selectors and a plurality of bit lines disposed in rows and coupled to respective sets of MTJ structures. The array of cells can also include buffers coupled between respective selectors and respective MTJ structures. In addition, multiple arrays can be stacked on top of each other to implement vertical three-dimensional (3D) MTJ devices.
Public/Granted literature
- US20190214429A1 DEVICES INCLUDING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SELECTORS Public/Granted day:2019-07-11
Information query
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