Invention Grant
- Patent Title: Multilayered seed structure for magnetic memory element including a CoFeB seed layer
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Application No.: US16287987Application Date: 2019-02-27
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Publication No.: US10438997B2Publication Date: 2019-10-08
- Inventor: Zihui Wang , Yiming Huai
- Applicant: Avalanche Technology, Inc.
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Bing K. Yen
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/10 ; H01L43/02 ; H01L43/08 ; G11C11/16

Abstract:
The present invention is directed to a magnetic structure including a first seed layer, which is made of a first transition metal, formed on top of a second seed layer comprising cobalt, iron, and boron; and a magnetic fixed layer structure formed on top of the first seed layer and having a first invariable magnetization direction substantially perpendicular to a layer plane thereof. The magnetic fixed layer structure includes layers of a first magnetic material interleaved with layers of a second transition metal. The first transition metal may be chromium or iridium. The second transition metal may be nickel, platinum, palladium, or iridium. The second seed layer which comprises cobalt, iron, and boron, may have a noncrystalline structure. Moreover, the second seed layer may be non-magnetic or superparamagnetic. The magnetic structure may further includes a third seed layer, which may comprise tantalum, formed adjacent to the second seed layer opposite the first seed layer.
Public/Granted literature
- US20190198566A1 Multilayered Seed for Magnetic Structure Public/Granted day:2019-06-27
Information query
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