Invention Grant
- Patent Title: Schottky contact structure for semiconductor devices and method for forming such Schottky contact structure
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Application No.: US16033500Application Date: 2018-07-12
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Publication No.: US10439035B2Publication Date: 2019-10-08
- Inventor: Kamal Tabatabaie-Alavi , Kezia Cheng , Christopher J. MacDonald
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L29/47 ; H01L21/285 ; H01L29/20 ; H01L29/78 ; H01L29/778
Abstract:
A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.
Public/Granted literature
Information query
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