Invention Grant
- Patent Title: Cascode heterojunction bipolar transistor
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Application No.: US16394421Application Date: 2019-04-25
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Publication No.: US10439053B2Publication Date: 2019-10-08
- Inventor: Vibhor Jain , Alvin J. Joseph , Qizhi Liu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/08 ; H01L29/06 ; H01L29/165 ; H01L29/66 ; H01L27/12 ; H01L23/535 ; H01L21/768 ; H01L21/02 ; H01L21/84
Abstract:
Fabrication methods and device structures for heterojunction bipolar transistors. A first emitter of a first heterojunction bipolar transistor and a second collector of a second heterojunction bipolar transistor are formed in a device layer of a silicon-on-insulator substrate. A first base layer of a first heterojunction bipolar transistor is epitaxially grown on the device layer with an intrinsic base portion arranged on the first emitter. A first collector of the first heterojunction bipolar transistor is epitaxially grown on the intrinsic base portion of the first base layer. A second base layer of the second heterojunction bipolar transistor is epitaxially grown on the device layer with an intrinsic base portion arranged on the second collector. A second emitter of the second heterojunction bipolar transistor is epitaxially grown on the intrinsic base portion of the second base layer. A connection is formed between the first emitter and the second collector.
Public/Granted literature
- US20190252530A1 CASCODE HETEROJUNCTION BIPOLAR TRANSISTORS Public/Granted day:2019-08-15
Information query
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