A semiconductor device includes an n-type silicon carbide epitaxial layer on a front surface of an n+-type silicon carbide substrate. A first p+-type base region is provided in the n-type silicon carbide epitaxial layer and a breakdown voltage structure region is provided in an outer periphery of an active region through which a main current flows. A distance between the first p+-type base region and a front surface of the n+-type silicon carbide substrate is smaller than a distance between the breakdown voltage structure region and the front surface of the n+-type silicon carbide substrate.