Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14942786Application Date: 2015-11-16
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Publication No.: US10439061B2Publication Date: 2019-10-08
- Inventor: Takeyoshi Nishimura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2014-248431 20141208
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/06 ; H01L23/495

Abstract:
A front surface electrode common to a plurality of unit cells is provided substantially all over an active region of a semiconductor element. A plurality of electrode pads on the front surface electrode are closer to the outer peripheral portion side than the central portion of the active region. Different wires are joined to substantially the center of each electrode pad. The active region is divided into two or more segments so that the segments are aligned along the path of current flowing through the front surface electrode, and unit cells different in conduction ability are disposed respectively in each segment. Unit cells lowest in conduction ability are in the first segment farthest from junctions of the wires and electrode pads, and the unit cells are disposed so that the farther apart from the junctions of the wires and electrode pads, the lower in conduction ability the unit cells are.
Public/Granted literature
- US20160163854A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-06-09
Information query
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