Invention Grant
- Patent Title: Display substrate including thin film transistors having a multilayered oxide semiconductor pattern
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Application No.: US14858281Application Date: 2015-09-18
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Publication No.: US10439067B2Publication Date: 2019-10-08
- Inventor: Ki-Won Kim , Kap-Soo Yoon , Do-Hyun Kim , Hyun-Jung Lee
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0004021 20100115
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/24 ; H01L21/02 ; H01L27/32 ; H01L29/66
Abstract:
A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide.
Public/Granted literature
- US20160020331A1 DISPLAY SUBSTRATE Public/Granted day:2016-01-21
Information query
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