Invention Grant
- Patent Title: Infrared ray detection element and method for manufacturing infrared ray detection element
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Application No.: US16307559Application Date: 2017-05-23
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Publication No.: US10439092B2Publication Date: 2019-10-08
- Inventor: Akie Yutani
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-137531 20160712
- International Application: PCT/JP2017/019131 WO 20170523
- International Announcement: WO2018/012115 WO 20180118
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/11 ; H01L31/18

Abstract:
This infrared ray detection element has a diode part that includes serially connected first and second p-n junction diodes. The diode part has: n-type and p-type first regions in a well shape that are adjacent to each other; a p-type second region that constitutes a first p-n junction diode with the n-type first region; and an n-type second region that constitutes a second p-n junction diode with the p-type first region. The n-type and p-type first regions are respectively provided with n-type and p-type third regions that electrically connect the first p-n junction diode and the second p-n junction diode via a conductive material. The n-type first region has a p-type fourth region provided between the p-type first region and the p-type second region. The p-type first region has an n-type fourth region provided between the n-type first region and the n-type second region.
Public/Granted literature
- US20190267508A1 INFRARED RAY DETECTION ELEMENT AND METHOD FOR MANUFACTURING INFRARED RAY DETECTION ELEMENT Public/Granted day:2019-08-29
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