Invention Grant
- Patent Title: Power amplifier circuit with adjustable bias voltage
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Application No.: US15902969Application Date: 2018-02-22
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Publication No.: US10439566B2Publication Date: 2019-10-08
- Inventor: Hao Sun
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201710310036 20170505
- Main IPC: H03F3/217
- IPC: H03F3/217 ; H03F1/02 ; H03F3/21 ; H03F3/45 ; H03F3/195 ; H03F3/24 ; H03F3/30

Abstract:
A power amplifier circuit includes a differential to single-ended converter, a gain stage circuit, a driver stage circuit, and an output stage circuit connected in series, and a bias circuit connected to a bias voltage port of the gain stage circuit for adjusting a bias voltage of the gain stage circuit. The bias voltage is adjustable to ensure low power consumption, improve the efficiency of the power amplifier circuit and prevent process, voltage and temperatures from affecting the performance of the power amplifier circuit.
Public/Granted literature
- US20180323756A1 POWER AMPLIFIER CIRCUIT WITH ADJUSTABLE BIAS VOLTAGE Public/Granted day:2018-11-08
Information query
IPC分类: