A method of fabricating an RF filter comprising an array of resonators comprising the steps of: Obtaining a removable carrier with release layer; Growing a piezoelectric film on a removable carrier; Applying a first electrode to the piezoelectric film; Obtaining a backing membrane on a cover, with or without prefabricated cavities between the backing film and cover; Attaching the backing membrane to the first electrode; Detaching the removable carrier; Measuring and trimming the piezoelectric film as necessary; Selectively etching away the piezoelectric layer to fabricate discrete resonator islands; Etching down through coatings and backing membrane to a silicon dioxide layer between the backing membrane and the cover to form trenches; Applying a passivation layer into the trenches and around the piezoelectric islands; Depositing a second electrode layer over the piezoelectric film islands and surrounding passivation layer; Applying connections for subsequent electrical coupling to an interposer; Selectively removing second electrode material leaving coupled resonator arrays; Creating a gasket around perimeter of the resonator array; Thinning down cover to desired thickness; Optionally fabricating upper cavities between the backing membrane and cover by drilling holes through the cover and then selectively etching away the silicon dioxide; Dicing the wafer into flip chip single unit filter arrays; Obtaining an interposer; Optionally applying a dam to the interposer surface to halt overfill flow; Coupling the flip chip single unit filter array to pads of the interposer by reflow of the solder cap; Encapsulating with polymer underfill/overfill; and Singulating into separate filter modules.