Invention Grant
- Patent Title: Semiconductor module
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Application No.: US16059812Application Date: 2018-08-09
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Publication No.: US10439606B2Publication Date: 2019-10-08
- Inventor: Kenichi Okayama , Nobuhiro Higashi
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JP2017-156750 20170815; JP2018-118344 20180621
- Main IPC: H03K17/60
- IPC: H03K17/60 ; H01L27/02 ; H03K17/74 ; H03K17/567 ; H01L29/739 ; H03K17/082

Abstract:
A semiconductor module includes a high-side switching device and a low-side switching device that respectively form an upper arm and a lower arm, freewheeling diodes that are respectively connected to the switching devices in anti-parallel, and a high-side driver circuit and a low-side driver circuit that respectively switch the high-side switching device and the low-side switching device ON and OFF. In the upper arm, an anode electrode of the freewheeling diode and a reference voltage electrode of the high-side driver circuit are directly connected via a first wiring, and the anode electrode of the freewheeling diode is connected to a reference voltage electrode of the high-side switching device via a second wiring having an inductance.
Public/Granted literature
- US20190058468A1 SEMICONDUCTOR MODULE Public/Granted day:2019-02-21
Information query
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