Invention Grant
- Patent Title: Mixed three-dimensional memory
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Application No.: US15494539Application Date: 2017-04-23
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Publication No.: US10446193B2Publication Date: 2019-10-15
- Inventor: Guobiao Zhang
- Applicant: Guobiao Zhang
- Applicant Address: CN HangZhou, ZheJiang US OR Corvallis
- Assignee: Hangzhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee: Hangzhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee Address: CN HangZhou, ZheJiang US OR Corvallis
- Priority: CN201710109704 20170228; CN201710119051 20170302
- Main IPC: G11C5/02
- IPC: G11C5/02 ; H01L27/06 ; H01L49/02 ; G11C8/12 ; H01L27/112

Abstract:
The present invention discloses a mixed three-dimensional memory (3D-Mx). It comprises memory arrays (or, memory blocks) of different sizes. In a 3D-Mx with mixed memory blocks, the memory blocks with different sizes are formed side-by-side. In a 3D-Mx with mixed memory arrays, a plurality of small memory arrays are formed side-by-side underneath a single large memory array.
Public/Granted literature
- US20170229158A1 Mixed Three-Dimensional Memory Public/Granted day:2017-08-10
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