Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US15918090Application Date: 2018-03-12
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Publication No.: US10446212B2Publication Date: 2019-10-15
- Inventor: Susumu Hashimoto , Yasuaki Ootera , Tsuyoshi Kondo , Takuya Shimada , Michael Arnaud Quinsat , Masaki Kado , Nobuyuki Umetsu , Shiho Nakamura , Tomoya Sanuki , Yoshihiro Ueda , Shinji Miyano , Hideaki Aochi , Yasuhito Yoshimizu , Yuichi Ito
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2017-178358 20170915
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L27/22 ; H01L43/08 ; H01L43/02 ; H01F10/32 ; H01L43/10
Abstract:
According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.
Public/Granted literature
- US20190088304A1 MAGNETIC MEMORY DEVICE Public/Granted day:2019-03-21
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