High-density semiconductor device

Invention Grant

US10446406B2 High-density semiconductor device 有权

Please log in to see more content

Patent Title: High-density semiconductor device
Application No.: US15585289

Application Date: 2017-05-03
Publication No.: US10446406B2

Publication Date: 2019-10-15
Inventor: Lei-Chun Chou , Chih-Liang Chen , Chih-Ming Lai , Charles Chew-Yuen Young , Chin-Yuan Tseng , Hsin-Chih Chen , Shi Ning Ju , Jiann-Tyng Tzeng , Kam-Tou Sio , Ru-Gun Liu , Wei-Cheng Lin , Wei-Liang Lin
Applicant: Taiwan Semiconductor Manufacturing Company Limited
Applicant Address: TW Hsinchu
Assignee: Taiwan Semiconductor Manufacturing Company Limited
Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
Current Assignee Address: TW Hsinchu
Agency: Jones Day
Main IPC: H01L21/308
IPC: H01L21/308 ; H01L21/306 ; H01L21/8234 ; H01L29/66

Abstract:

A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

Public/Granted literature

US20180151381A1 High-Density Semiconductor Device Public/Granted day:2018-05-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）