Invention Grant
- Patent Title: Process for etching a SiN-based layer
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Application No.: US15961338Application Date: 2018-04-24
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Publication No.: US10446408B2Publication Date: 2019-10-15
- Inventor: Nicolas Posseme
- Applicant: COMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1753542 20170425
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/8238 ; H01L21/84 ; H01L21/3115 ; H01L29/66 ; H01L27/092 ; H01L29/786
Abstract:
A microelectronic method for etching a layer containing silicon nitride is provided, including the following successive steps: modifying the layer containing silicon nitride (SiN) so as to form at least one modified zone, the modifying including at least one implantation of ions made from hydrogen (H) in the layer containing SiN; and removing the at least one modified zone, the removing of the at least one modified zone including at least one step of etching of the at least one modified zone using a chemistry including at least: at least one compound chosen from the fluorocarbon compounds (CxFz) and the hydrofluorocarbon compounds (CxHyFz), and at least one compound chosen from SiwCl(2w+2) and SiwF(2w+2).
Public/Granted literature
- US20180315614A1 PROCESS FOR ETCHING A SiN-BASED LAYER Public/Granted day:2018-11-01
Information query
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